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| Type IPUH6N03LB IPSH6N03LB OptiMOS(R)2 Power-Transistor Package Marking * Qualified according to JEDEC1) for target applications * N-channel - Logic level * Excellent gate charge x R DS(on) product (FOM) * Superior thermal resistance * 175 C operating temperature * Pb-free lead plating; RoHS compliant Product Summary V DS R DS(on),max ID 30 6.3 50 V m A Type IPUH6N03LB IPSH6N03LB Package Marking PG-TO251-3 H6N03LB PG-TO251-3-11 H6N03LB Maximum ratings, at T j=25 C, unless otherwise specified Parameter Symbol Conditions Value Unit Continuous drain current ID T C=25 C2) T C=100 C 50 50 200 160 6 20 A Pulsed drain current Avalanche energy, single pulse Reverse diode dv /dt Gate source voltage4) Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 1) I D,pulse E AS dv /dt V GS P tot T j, T stg T C=25 C3) I D=50 A, R GS=25 I D=50 A, V DS=20 V, di /dt =200 A/s, T j,max=175 C mJ kV/s V W C T C=25 C 83 -55 ... 175 55/175/56 J-STD20 and JESD22 Rev. 0.3 page 1 2006-05-15 IPUH6N03LB Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area5) Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 mA V GS(th) I DSS V DS=V GS, I D=40 A V DS=30 V, V GS=0 V, T j=25 C V DS=30 V, V GS=0 V, T j=125 C Gate-source leakage current I GSS R DS(on) V GS=20 V, V DS=0 V V GS=4.5 V, I D=30 A V GS=10 V, I D=50 A Gate resistance Transconductance RG g fs |V DS|>2|I D|R DS(on)max, I D=50 A 30 1.2 1.6 0.1 Values typ. IPSH6N03LB Unit max. 1.8 62 40 K/W 2 1 V A 39 10 10 7.4 5.2 1.2 78 100 100 9.3 6.3 S nA m 2) Current is limited by bondwire; with an R thJC=1.8 K/W the chip is able to carry 86 A. See figure 3 T j,max=150 C and duty cycle D <0.25 for V GS<-5 V 3) 4) 5) 2 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. Rev. 0.3 page 2 2006-05-15 IPUH6N03LB Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics 6) Gate to source charge Gate charge at threshold Gate to drain charge Switching charge Gate charge total Gate plateau voltage Gate charge total, sync. FET Output charge Reverse Diode Diode continous forward current Diode pulse current Diode forward voltage IS I S,pulse V SD T C=25 C V GS=0 V, I F=50 A, T j=25 C V R=15 V, I F=I S, di F/dt =400 A/s 0.93 Q gs Q g(th) Q gd Q sw Qg V plateau Q g(sync) Q oss V DS=0.1 V, V GS=0 to 5 V V DD=15 V, V GS=0 V V DD=15 V, I D=25 A, V GS=0 to 5 V 6.5 3.3 4.2 7.4 16 3.1 14 17 C iss C oss Crss t d(on) tr t d(off) tf V DD=15 V, V GS=10 V, I D=25 A, R G=2.7 V GS=0 V, V DS=15 V, f =1 MHz 2100 750 97 7 6 25 4.0 Values typ. IPSH6N03LB Unit max. 2800 1000 150 10 8 37 6.0 pF ns 8.7 4.5 6.4 11 22 19 22 nC V nC 50 200 1.2 A V Reverse recovery charge Q rr - - 10 nC 6) See figure 16 for gate charge parameter definition Rev. 0.3 page 3 2006-05-15 IPUH6N03LB 1 Power dissipation P tot=f(T C) 2 Drain current I D=f(T C); V GS10 V IPSH6N03LB 90 80 60 50 70 60 40 P tot [W] I D [A] 0 50 100 150 200 50 40 30 20 30 20 10 10 0 0 0 50 100 150 200 T C [C] T C [C] 3 Safe operating area I D=f(V DS); T C=25 C; D =0 parameter: t p 1000 1 s limited by on-state resistance 10 s 4 Max. transient thermal impedance Z thJC=f(t p) parameter: D =t p/T 10 1 0.5 100 100 s 0.2 DC Z thJC [K/W] 0.1 I D [A] 0.1 0.05 0.02 0.01 single pulse 1 ms 10 10 ms 0.01 1 0.1 1 10 100 0.001 10-6 0 10-5 0 10-4 0 10-3 0 10-20 10-1 0 100 1 V DS [V] t p [s] Rev. 0.3 page 4 2006-05-15 IPUH6N03LB 5 Typ. output characteristics I D=f(V DS); T j=25 C parameter: V GS 100 10 V 4.5 V IPSH6N03LB 6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 C parameter: V GS 25 4.1 V 3.2 V 3.8 V 3.5 V 4.1 V 90 80 70 60 20 3V 3.8 V 50 3.5 V R DS(on) [m] 15 I D [A] 40 30 20 3V 10 4.5 V 3.2 V 5 10 V 10 0 0 1 2 2.8 V 0 3 0 20 40 60 80 100 V DS [V] I D [A] 7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 100 90 80 70 8 Typ. forward transconductance g fs=f(I D); T j=25 C 120 100 80 60 50 40 30 20 175 C g fs [S] 25 C I D [A] 60 40 20 10 0 0 1 2 3 0 4 5 0 20 40 60 80 V GS [V] I D [A] Rev. 0.3 page 5 2006-05-15 IPUH6N03LB 9 Drain-source on-state resistance R DS(on)=f(T j); I D=50 A; V GS=10 V 10 Typ. gate threshold voltage V GS(th)=f(T j); V GS=V DS parameter: I D 12 11 10 2 9 8 400 A 98 % IPSH6N03LB 2.5 R DS(on) [m] V GS(th) [V] 7 6 5 4 3 2 1 0 -60 -20 20 60 100 140 180 typ 1.5 40 A 1 0.5 0 -60 -20 20 60 100 140 180 T j [C] T j [C] 11 Typ. Capacitances C =f(V DS); V GS=0 V; f =1 MHz 12 Forward characteristics of reverse diode I F=f(V SD) parameter: T j 10000 1000 Ciss 1000 Coss 100 25 C 175C 98% 175 C C [pF] 100 Crss I F [A] 10 25C 98% 10 0 5 10 15 20 25 30 1 0.0 0.5 1.0 1.5 2.0 V DS [V] V SD [V] Rev. 0.3 page 6 2006-05-15 IPUH6N03LB 13 Avalanche characteristics I AS=f(t AV); R GS=25 parameter: Tj(start) 100 IPSH6N03LB 14 Typ. gate charge V GS=f(Q gate); I D=25 A pulsed parameter: V DD 12 25 C 100 C 150 C 10 5V 15 V 20 V 8 10 V GS [V] 1 10 100 1000 I AV [A] 6 4 2 1 0 0 10 20 30 40 t AV [s] Q gate [nC] 15 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=1 mA 16 Gate charge waveforms 38 V GS 36 34 32 Qg V BR(DSS) [V] 30 28 26 24 22 20 -60 -20 20 60 100 140 180 V g s(th) Q g(th) Q gs Q sw Q gd Q g ate T j [C] Rev. 0.3 page 7 2006-05-15 IPUH6N03LB PG-TO251-3: Outline IPSH6N03LB Packaging: Rev. 0.3 page 8 2006-05-15 IPUH6N03LB PG-TO251-3-11: Outline IPSH6N03LB Packaging: Rev. 0.3 page 9 2006-05-15 IPUH6N03LB IPSH6N03LB Published by Infineon Technologies AG 81726 Munchen, Germany (c) Infineon Technologies AG 2006. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie"). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 0.3 page 10 2006-05-15 |
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